STN851 low voltage fast-switching npn power transistor preliminary data n very low collector to emitter saturation voltage n high current gain characteristic n fast-switching speed n surface-mounting sot-223 medium power package in tape & reel applications: n emergency lighting n voltage regulators n relay drivers n high efficiency low voltage switching applications description the device is manufactured in npn planar technology by using a "base island" layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. ? internal schematic diagram september 2003 absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 150 v v ceo collector-emitter voltage (i b = 0) 60 v v ebo emitter-base voltage (i c = 0) 7 v i c collector current 5 a i cm collector peak current (t p < 5 ms) 10 a i b base current 1 a i bm base peak current (t p < 5 ms) 2 a p tot total dissipation at t amb = 25 o c 1.6 w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 2 2 3 sot-223 ordering code marking shipment STN851 n851 tape & reel 1/7 ( datasheet : )
thermal data r thj-amb thermal resistance junction-ambient max 78 o c/w device mounted on a p.c.b. area of 1 cm 2 electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 120 v v cb = 120 v t j = 100 o c 50 1 na m a i ebo emitter cut-off current (i c = 0) v eb = 7 v 10 na v (br)cbo collector-base breakdown voltage (i e = 0) i c = 100 m a 150 v v (br)ceo * collector-emitter breakdown voltage (i b = 0) i c = 10 ma 60 v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 100 m a 7v v ce(sat) * collector-emitter saturation voltage i c = 100 ma i b = 5 ma i c = 1 a i b = 50 ma i c = 2 a i b = 50 ma i c = 5 a i b = 200 ma 10 70 140 320 50 120 250 500 mv mv mv mv v be(sat) * base-emitter saturation voltage i c = 4 a i b = 200 ma 1 1.15 v v be(on) * base-emitter on voltage i c = 4 a v ce = 1 v 0.89 1 v h fe * dc current gain i c = 10 ma v ce = 1 v i c = 2 a v ce = 1 v i c = 5 a v ce = 1 v i c = 10 a v ce = 1 v 150 150 90 30 300 270 140 50 350 f t transition frequency v ce = 10 v i c = 100 ma 130 mhz c cbo collector-base capacitance v cb = 10 v f = 1 mhz 50 pf t on t s t f resistive load turn- on time storage time fall time i c = 1 a v cc = 10 v i b1 = - i b2 = 0.1 a 50 1.35 120 ns m s ns * pulsed: pulse duration = 300 m s, duty cycle = 1.5 % STN851 2/7
base-emitter saturation voltage base-emitter on voltage collector-emitter saturation voltage collector-emitter saturation voltage derating curve dc current gain STN851 3/7
switching times inductive load switching times resistive load switching times inductive load switching times resistive load switching times resistive load STN851 4/7
figure 1: resistive load switching test circuit. 1) fast electronic switch 2) non-inductive resistor STN851 5/7
dim. mm inch min. typ. max. min. typ. max. a 1.80 0.071 b 0.60 0.70 0.80 0.024 0.027 0.031 b1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 d 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 e 3.30 3.50 3.70 0.130 0.138 0.146 h 6.70 7.00 7.30 0.264 0.276 0.287 v10 o 10 o a1 0.02 p008b sot-223 mechanical data STN851 6/7
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